Diffusion Furnaces

Athmospheric Process

• Wet or dry oxidation
• Thick oxide (15um)
• Well drive in
• H2, N2 annealing
• POCL3 doping
• BBr3, B2H6 doping

LP-CVD Process

• Poly Si
• D-Poly Si
• Nitride: Si3N4
• Low stress Nitride (250MPa)
• Super Low stress Nitride (250MPa)
• Oxide – LTO, MTO, HTO, TEOS
• Thick oxide: TEOD (2um up)
• Sic

WMVF-4 Series

Features

• Compact design, very small footprint
• Automatic boat elevator
• Supported small size sample wafers
• R&D type

MODELWMVF-4 Series
Application processes

Atmospheric Processes



  • Wet, Dry Oxidation

  • N2, H2 Annealing

  • PoCl3 Doping

  • BBr3,B2H6 Doping


LP-CVD Processes



  • Poly Si

  • Nitride : Si3N4,SiNx(Low stress<100Mpa)

  • Oxide : MTO,HTO,TEOS

  • PSG,Etc.
Temperature Control Range200°C to 1150°C
Temperature Control Zone
3 Zone
Temperature Accuracy
±1 at 200°C to 500°C , ±0.5 at 600°C to 1150°C
Uniformity of Film ThicknessN2, O2, Ar, H2, N2O, SiH4, NH3, B2H6, PH3, SiH2Cl2
Possible Process Gases
PC-Base (Windows XP) PLC Control
Controller Type
PC-Base (Windows XP) PLC Control
Display
15” TFT Touch LCD Monitor
Wafer Size
150mm or less
Batch Size
25 Wafers
Auto Loader
1 Axis Loader (Z Axis)
Dimension(W*D*H)850 * 800 * 2000 (unit : mm)
Power Supply3 Phase 380V, 60A (system will be modified to country-specific power supply)
Cooling Water
Max. 10 LPM / Tube
Compressed Dry Air500 ~ 600 KPa
Heat Exhaust150 m3/h

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